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DATA SHEET
SILICON TRANSISTOR ARRAY
PA1454
NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE INDUSTRIAL USE
DESCRIPTION
The PA1454 is NPN silicon epitaxial Power Transistor Array that built in 4 circuits designed for driving solenoid, relay, lamp and so on.
26.8 MAX. 4.0
PACKAGE DIMENSION (in millimeters)
FEATURES
10 MIN. 1.4 0.6 0.1 2.54 1.4 0.5 0.1 1 2 3 4 5 6 7 8 9 10
* Easy mount by 0.1 inch of terminal interval. * High hFE. Low VCE(sat).
hFE = 800 to 3200 (at IC = 1 A) VCE(sat) = 1.0 V MAX. (at IC = 3 A)
10 2.5
ORDERING INFORMATION
Part Number Package 10 Pin SIP Quality Grade Standard
PA1454H
CONNECTION DIAGRAM
Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 3 2 1 PIN No. 2, 4, 6, 8 : Base (B) 3, 5, 7, 9 : Collector (C) 1, 10 : Emitter (E) 4 5 6 7 8 10 9
ABSOLUTE MAXIMUM RATINGS (Ta = 25 C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse) Base Current (DC) Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT1** PT2*** Tj 100 100 7 5 10 1.0 3.5 28 150 V V V A/unit A/unit A/unit W W C
Tstg -55 to +150 C
* PW 300 s, Duty Cycle 10 % ** 4 Circuits, Ta = 25 C *** 4 Circuits, Tc = 25 C
The information in this document is subject to change without notice. Document No. IC-3520 Date Published September 1994 P Printed in Japan
(c)
1994
PA1454
ELECTRICAL CHARACTERISTICS (Ta = 25 C)
CHARACTERISTIC Collector Leakage Current Emitter Leakage Current DC Current Gain DC Current Gain Collector Saturation Voltage Base Saturation Voltage Turn On Time Storage Time Fall Time SYMBOL ICBO IEBO hFE1 hFE2 MIN. TYP. MAX. 10 10 UNIT TEST CONDITIONS VCB = 100 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 1 A VCE = 5 V, IC = 3 A IC = 3 A, IB = 30 mA IC = 3 A, IB = 30 mA IC = 3 A IB1 = -IB2 = 30 mA . . VCC = 50 V, RL = 16.7 . . See test circuit
A A
-- --
* *
800 500
1300 1000
3200
VCE(sat) * VBE(sat) * ton tstg tf 1 3 1.5
1.0 1.2
V V
s s s
* PW 350 s, Duty Cycle 2 % / pulsed
SWITCHING TIME TEST CIRCUIT
. RL = 16.7 . VIN 1B1 T.U.T. 1B2 PW . PW = 50 s . Duty Cycle 2 % IC Base Current Wave Form . VCC = 50 V . Collector Current Wave Form . VBB = -5 V . ton 90 % IC 10 % tstg tf IB1 IB2
2
PA1454
TYPICAL CHARACTERISTICS (Ta = 25 C)
DERATING CURVE OF SAFE OPERATING AREA 100 dT - Percentage of Rated Current - % 50 100 IC - Collector Current - A 80 60 40 20 0.1 0 50 100 150 TC - Case Temperature - C 1 TC = 25 C Single Pulse 10 50 5 VCE - Collector to Emitter Voltage - V 10 5 IC(pulse) MAX. IC(DC) MAX.
m 1 ms s 10 0 m 5 s
SAFE OPERATING AREA
S/
bL
P 10 W 0= s
s 0 30
im
ite
0.5
100
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 30 PT - Total Power Dissipation - W PT - Total Power Dissipation - W NEC PA1454
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 20 1 Circuit Operation
4 3 2 1
4 Circuits Operation 3 Circuits Operation 2 Circuits Operation 1 Circuit Operation
10
0
25 50 75 100 125 Ta - Ambient Temperature - C
150
0
25
50 75 100 125 TC - Case Temperature - C
150
DC CURRENT GAIN vs. COLLECTOR CURRENT 10000 hFE - DC Current Gain VCE(sat) - Collector Saturation Voltage - V VBE(sat) - Base Saturation Voltage - V VCE = 5 V Pulsed 10
BASE AND COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT
1000
1
VBE(sat)
IC = 200*IB
IC = 1
0.1 0.02 0.01
000*IB
100
50 IC =
0*IB
*IB IB 0* 00 20 = 1 = IC IC
10 0.001
0.01 0.1 1 IC - Collector Current -A
10
0.1 1 IC - Collector Current - A
VC
E(s
at)
10
3
VCEO MAX.
ss Di ip at io
d
1
n Li m i te d
PA1454
TRANSIENT THERMAL RESISTANCE Rth (j-c) - Transient Thermal Resistance - C/W 100 VCE 10 V 5 IC - Collector Current - A 6
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
50
20
4 3 2 1
10
5
10
2
1.5
1
1
IB = 0.5 mA
0.1
1 10 PW - Pulse Width - ms
100
0
1 2 3 4 VCE - Collector to Emitter Voltage - V
5
4
PA1454
REFERENCE
Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134
5
PA1454
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc.
M4 92.6

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